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2SD1145 - NPN TRANSISTOR

Key Features

  • Low saturation voltage.
  • Large current capacity and wide ASO. 0.5 0.6 6.0 14.0 3.0 8.5 0.5 0.5 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg 100ms, single pulse Conditions 1.45 1.45 1 : Emitter 2 : Collector 3 : Base EIAJ : SC-51.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN784E NPN Epitaxial Planar Silicon Transistor www.DataSheet4U.com 2SD1145 High-Current Driver Applications Applications · Relay drivers, hammer drivers, lamp drivers, strobe DC-DC converters, motor drivers. Package Dimensions unit:mm 2006B [2SD1145] 6.0 5.0 4.7 Features · Low saturation voltage. · Large current capacity and wide ASO. 0.5 0.6 6.0 14.0 3.0 8.5 0.5 0.5 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg 100ms, single pulse Conditions 1.45 1.