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2SD1347 - NPN Epitaxial Planar Silicon Transistors

Key Features

  • Adoption of FBET, MBIT processes.
  • Low saturation voltage.
  • Large current capacity and wide ASO. ( ) : 2SB985 EIAJ : SC-51 SANYO : MP Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions B : Base C : Collector E : Emitter Ratings (.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:1244C PNP/NPN Epitaxial Planar Silicon Transistors 2SB985/2SD1347 Large-Current Driving Applications Applcations · Power supplies, relay drivers, lamp drivers, electrical equipment. Package Dimensions unit:mm 2006A [2SB985/2SD1347] Features · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO.