2SD1618
Features
- Low collector-to-emitter saturation voltage.
- Very small size making it easy to provide high- density, small-sized hybrid IC’s.
Package Dimensions unit:mm 2038
[2SB1118/2SD1618]
( ) : 2SB1118
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Conditions Mounted on ceramic board (250mm2×0.8mm)
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product
ICBO IEBO h FE1 h FE2 f T
VCB=(- )15V, IE=0 VEB=(- )4V, IC=0 VCE=(- )2V, IC=(- )50m A VCE=(- )2V, IC=(- )500m A VCE=(- )10V, IC=(- )50m A
- ; The 2SB1118/2SD1618 are classified by 50m A h FE as follows :
140 S 280 200 T 400 280 U 560
Marking 2SB1118 : BA 2SD1618 : DA h FE rank : S, T, U
E :...
