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2SD1835 - PNP/NPN Epitaxial Planar Silicon Transistor

Key Features

  • Adoption of FBET, MBIT processes.
  • Large current capacity.
  • Low collector-to-emitter saturation voltage.
  • Fast switching time. ( ) : 2SB1229 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions JEDEC : TO-92 EIAJ : SC-43 SANYO :.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN2158A PNP/NPN Epitaxial Planar Silicon Transistor 2SB1229/2SD1835 Driver Applications Applications · Voltage regulators, relay drivers, lamp drivers, electrical equipment. w w w . D a t a S h e e t 4 U . c o m Package Dimensions unit:mm 2003A [2SB1229/2SD1835] Features · Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching time.