2SD1880 - NPN Triple Diffused Planar Silicon Transistor

Product Overview

Sanyo Semicon Device

Part number	2SD1880
Manufacturer	Sanyo Semicon Device
File Size	142.65 KB
Description	NPN Triple Diffused Planar Silicon Transistor
Datasheet	2SD1880 Datasheet
Additional preview pages of the 2SD1880 datasheet.

High speed (tf=100ns).
High breakdown voltage (VCBO=1500V).
High reliability (adoption of HVP process).
On-chip damper diode. 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 2.0 1.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC.

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Published: Apr 3, 2005 |