2SD1882 - NPN Triple Diffused Planar Silicon Transistor

Product Overview

Sanyo Semicon Device

Part number	2SD1882
Manufacturer	Sanyo Semicon Device
File Size	88.20 KB
Description	NPN Triple Diffused Planar Silicon Transistor
Datasheet	2SD1882 Datasheet
Additional preview pages of the 2SD1882 datasheet.

High speed (tf=100ns).
High breakdown voltage (VCBO=1500V).
High reliability (adoption of HVP process). Package Dimensions unit:mm 2039D [2SD1882] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj.

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Published: Apr 3, 2005 |