2SD1886C
2SD1886C is NPN Triple Diffused Planar Silicon Transistor manufactured by SANYO.
Features
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NPN Triple Diffused Planar Silicon Transistor
Color TV Horizontal Deflection Output Applications
High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions Ratings 1500 700 5 8 25 3.0 80 150 --55 to +150 Unit V V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Symbol ICBO ICES VCEO(sus) IEBO Conditions VCB=800V, IE=0A VCE=1500V, RBE=0A IC=100m A, IB=0A VBE=4V, IC=0A 700 1.0 Ratings min typ max 10 1.0 Unit μA m A V m A
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