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2SD1981 - NPN Transistor

Key Features

  • Darlington connection (on-chip bias resistance, damper diode).
  • High DC current gain.
  • Low dependence of DC curr ent gain on temperature. 0.5 0.6 6.0 14.0 3.0 8.5 0.5 0.5 1 : Emitter 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter CV ollector-to-Base Voltage CV ollector-to-Emitter Voltage EV mitter-to-Base Voltage CI ollector Current CI ollector Current (Pulse) CP ollector Dissipation Jj unction Temperature Sg torage Temperature Symbol CBO CEO EBO C C.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN2534 NPN Epitaxial Planar Silicon Darlington Transistor 2SD1981 Driver Applications Applications · Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Package Dimensions unit:mm 2006B [2SD1981] 6.0 5.0 4.7 Features · Darlington connection (on-chip bias resistance, damper diode). · High DC current gain. · Low dependence of DC curr ent gain on temperature. 0.5 0.6 6.0 14.0 3.0 8.5 0.5 0.5 1 : Emitter 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter CV ollector-to-Base Voltage CV ollector-to-Emitter Voltage EV mitter-to-Base Voltage CI ollector Current CI ollector Current (Pulse) CP ollector Dissipation Jj unction Temperature Sg torage Temperature Symbol CBO CEO EBO C CP C T Tst Conditions 1.45 1.