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2SD895 - NPN Triple Diffused Planar Silicon Transistor

Key Features

  • Wide ASO because of on-chip ballast resistance.
  • Capable of being mounted easily becasuse of one- point fixing type plastic molded package (Interchangeable with TO-3).
  • Large current capacity : IC=6A.
  • Highly resistance breakdown due to wide ASO. Package Dimensions unit:mm 2022A [2SB775/2SD895] ( ) : 2SB775 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collec.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:679F 2SB775 : PNP Epitaxial Planar Silicon Transistor 2SD895 : NPN Triple Diffused Planar Silicon Transistor 2SB775/2SD895 85V/6A, AF 35W Output Applications Features · Wide ASO because of on-chip ballast resistance. · Capable of being mounted easily becasuse of one- point fixing type plastic molded package (Interchangeable with TO-3). · Large current capacity : IC=6A · Highly resistance breakdown due to wide ASO.