Datasheet4U Logo Datasheet4U.com

2SK1925 - N-Channel Silicon MOSFET

Datasheet Summary

Features

  • Low ON resistance.
  • Ultrahigh-speed switching.
  • High-speed diode (trr=150ns). Package Dimensions unit:mm 2056A [2SK1925] 15.6 3.2 14.0 4.8 2.0 1.3 1.2 3.5 15.0 20.0 2.6 1.6 2.0 1.0 123 0.6 1.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Tc=25°C Electric.

📥 Download Datasheet

Datasheet preview – 2SK1925

Datasheet Details

Part number 2SK1925
Manufacturer Sanyo Semicon Device
File Size 115.87 KB
Description N-Channel Silicon MOSFET
Datasheet download datasheet 2SK1925 Datasheet
Additional preview pages of the 2SK1925 datasheet.

📁 Similar Datasheet

  • 2SK1925 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK1922 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK1923 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK1924 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK1928-01R - Power MOSFET (Fuji Electric)
  • 2SK1929 - Silicon N-Channel MOSFET (Toshiba)
  • 2SK192A - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK19 - N-CHANNEL SILICON FET (Micro Electronics)
  • 2SK19 - N-Channel MOSFET (ETC)
  • 2SK1913 - N-Channel MOSFET Transistor (Inchange Semiconductor)
Other Datasheets by Sanyo Semicon Device

Full PDF Text Transcription

Click to expand full text
Ordering number:ENN4314 N-Channel Silicon MOSFET 2SK1925 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · High-speed diode (trr=150ns). Package Dimensions unit:mm 2056A [2SK1925] 15.6 3.2 14.0 4.8 2.0 1.3 1.2 3.5 15.0 20.0 2.6 1.6 2.0 1.0 123 0.6 1.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Tc=25°C Electrical Characteristics at Ta = 25˚C 5.
Published: |