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2SK1925 - N-Channel Silicon MOSFET

Key Features

  • Low ON resistance.
  • Ultrahigh-speed switching.
  • High-speed diode (trr=150ns). Package Dimensions unit:mm 2056A [2SK1925] 15.6 3.2 14.0 4.8 2.0 1.3 1.2 3.5 15.0 20.0 2.6 1.6 2.0 1.0 123 0.6 1.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Tc=25°C Electric.

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Full PDF Text Transcription (Reference)

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Ordering number:ENN4314 N-Channel Silicon MOSFET 2SK1925 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · High-speed diode (trr=150ns). Package Dimensions unit:mm 2056A [2SK1925] 15.6 3.2 14.0 4.8 2.0 1.3 1.2 3.5 15.0 20.0 2.6 1.6 2.0 1.0 123 0.6 1.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Tc=25°C Electrical Characteristics at Ta = 25˚C 5.