2SK2010 - N-Channel Silicon MOSFET

SANYO (now Panasonic)

Key Features

Low ON resistance.
Ultrahigh-speed switching.
Low-voltage drive.
Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SK2010] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications 2.55 Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature.

2SK2010 n-channel silicon mosfet by SANYO (now Panasonic) - Datasheet Preview

Datasheet Details

Part number	2SK2010
Manufacturer	SANYO (now Panasonic)
File Size	87.89 KB
Description	N-Channel Silicon MOSFET
Datasheet	2SK2010 Datasheet

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Other Datasheets by SANYO (now Panasonic)

Part Number	Description
2SK2011	N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN4319 N-Channel Silicon MOSFET 2SK2010 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SK2010] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications 2.