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Ordering number : EN5315A
N-Channel Silicon MOSFET
2SK2349
High-Voltage, High-Speed Switching Applications
Features
• Low ON resistance, ultrahigh-speed switching. • High reliability (Adoption of HVP process).
Package Dimensions
unit: mm 2131-TO-3JML
[2SK2349]
Specifications Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions
1 : Gate 2 : Drain 3 : Source SANYO: TO-3JML
PW≤10µs, duty cycle≤1% Tc=25°C
Ratings 1500 ±30 10 20 4.
2SK2349 Datasheet
