Datasheet4U Logo Datasheet4U.com

2SK2379 - N-channel Silicon MOSFET

Datasheet Summary

Features

  • Package Dimensions unit : mm 2063A [2SK2379] 10.0 3.2 3.5 7.2 Low ON-resistance. Ultrahigh-speed switching. Low-voltage drive. Micalless package facilitaing mounting. 4.5 2.8 18.1 16.0 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 5.6 2.4 0.7 2.55 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Ratings 200 ±20 20 Unit V V A A W W °C °C Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (D.

📥 Download Datasheet

Datasheet preview – 2SK2379

Datasheet Details

Part number 2SK2379
Manufacturer Sanyo Semicon Device
File Size 28.81 KB
Description N-channel Silicon MOSFET
Datasheet download datasheet 2SK2379 Datasheet
Additional preview pages of the 2SK2379 datasheet.

📁 Similar Datasheet

  • 2SK2370 - N-Channel MOSFET (NEC)
  • 2SK2371 - N-Channel MOSFET (NEC)
  • 2SK2372 - N-Channel MOSFET (NEC)
  • 2SK2373 - N-Channel MOSFET (Hitachi Semiconductor)
  • 2SK2374 - N-Channel MOSFET (Panasonic Semiconductor)
  • 2SK2375 - N-Channel MOSFET (Panasonic Semiconductor)
  • 2SK2376 - N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK2377 - Silicon N-Channel Power F-MOS (Panasonic)
  • 2SK2311 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK2312 - N-Channel MOSFET (Toshiba Semiconductor)
Other Datasheets by Sanyo Semicon Device
  • 2SK2378 - N-channel Silicon MOSFET
  • 2SK2316 - N-Channel Silicon MOSFET
  • 2SK2317 - N-Channel Silicon MOSFET
  • 2SK2318 - N-Channel Silicon MOSFET
  • 2SK2347 - N-Channel Silicon MOSFET
  • 2SK2348 - N-Channel Silicon MOSFET
  • 2SK2349 - N-Channel Silicon MOSFET
  • 2SK2394 - N-Channel Junction Silicon FET

Full PDF Text Transcription

Click to expand full text
Ordering number : ENN5374A 2SK2379 N-Channel Silicon MOSFET 2SK2379 Ultrahigh-Speed Switching Applications Features • • • • Package Dimensions unit : mm 2063A [2SK2379] 10.0 3.2 3.5 7.2 Low ON-resistance. Ultrahigh-speed switching. Low-voltage drive. Micalless package facilitaing mounting. 4.5 2.8 18.1 16.0 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 5.6 2.4 0.7 2.55 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Ratings 200 ±20 20 Unit V V A A W W °C °C Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg 2.55 2.55 Conditions PW≤10µs, duty cycle≤1% Tc=25°C 80 2.
Published: |