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2SK3449 - N-Channel MOSFET

Key Features

  • Package Dimensions unit : mm 2190 [2SK3449] 8.0 1.0 1.4 4.0 1.0 3.3 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 3.0 1.5 7.5 1.6 0.8 3.0 0.8 0.75 15.5 11.0 0.7 1 2 3 Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions 1.

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Ordering number : ENN6672 2SK3449 N-Channel Silicon MOSFET 2SK3449 DC / DC Converter Applications Features • • • Package Dimensions unit : mm 2190 [2SK3449] 8.0 1.0 1.4 4.0 1.0 3.3 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 3.0 1.5 7.5 1.6 0.8 3.0 0.8 0.75 15.5 11.0 0.7 1 2 3 Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions 1.7 Specifications 1 : Source 2 : Drain 3 : Gate SANYO : TO-126ML Ratings 60 ± 20 4.8 19.2 1 10 150 --55 to +150 Unit V V A A W W °C °C 2.4 4.