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2SK3748 - N-Channel Silicon MOSFET

Key Features

  • Low ON-resistance, low input capacitance, ultrahigh-speed switching.
  • High reliability (Adoption of HVP process).
  • Attachment workability is good by Mica-less package.
  • Avalanche resistance guarantee Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID.
  • IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Ts.

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Part Number Description
2SK3745LS N-Channel Silicon MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN8250B 2SK3748 SANYO Semiconductors DATA SHEET 2SK3748 N-Channel Silicon MOSFET High-Voltage, High-Speed Switching Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching • High reliability (Adoption of HVP process) • Attachment workability is good by Mica-less package • Avalanche resistance guarantee Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID* IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV *Shows chip capability *1 VDD=50V, L=20mH, IAV=4A (Fig.