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2SK3796 - N-Channel Junction Silicon FET

Key Features

  • Small IGSS. Small Ciss Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions Ratings 30 --30 10 10 100 150 --55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Cutoff Voltage Symbol V(BR)G.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN8636 2SK3796 www.DataSheet4U.com SANYO Semiconductors DATA SHEET 2SK3796 Applicatins • N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier, Impedance Converter Applications Low-frequency general-purpose amplifier, impedance conversion, analog switches applications. Features • • Small IGSS.