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2SK3850 - N-Channel Silicon MOSFET

Key Features

  • Best suited for motor drive.
  • Low ON-resistance.
  • Low Qg. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN8193 2SK3850 2SK3850 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Best suited for motor drive. • Low ON-resistance. • Low Qg.