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2SK436 - N-Channel MOSFET

Key Features

  • Largeyfs.
  • Ultralow noise figure.
  • Small Crss.
  • Ultrasmall-sized package permitting 2SK436-applied sets to be made small and slim. 2050A 0.4 3 [2SK436] 0.16 0 to 0.1 0.5 1.5 0.5 2.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSS VGDS IG ID PD Tj Tstg 1 0.95 0.95 2 1.9 2.9 Conditions 0.8 1.1 1 :.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN1405B N-Channel Junction Silicon FET 2SK436 High-Frequency, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions · AM tuner RF amplifiers and low-noise amplifiers. unit:mm Features · Largeyfs. · Ultralow noise figure. · Small Crss. · Ultrasmall-sized package permitting 2SK436-applied sets to be made small and slim. 2050A 0.4 3 [2SK436] 0.16 0 to 0.1 0.5 1.5 0.5 2.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSS VGDS IG ID PD Tj Tstg 1 0.95 0.95 2 1.9 2.9 Conditions 0.8 1.