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2SK715 - N-Channel Power MOSFET

Key Features

  • Adoption of FBET process.
  • Large yfs.
  • Small Ciss.
  • Very low noise figure. 0.4 0.5 2.2 0.6 1.8 15.0 0.4 0.4 1 2 1.3 0.7 3 1.3 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSS VGDS IG ID PD Tj Tstg Conditions 3.0 3.8nom 1 : Source 2 : Gate 3 : Drain SANYO : SPA Ratings 15.
  • 15 10 50 300.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN2543 www.DataSheet4U.com N-Channel Junction Silicon FET 2SK715 AM Tuner, RF Amplifier Applications Applications · AM tuner RF amp, low-noise amp. · HF low-noise amp. Package Dimensions unit:mm 2034A 4.0 [2SK715] 3.0 Features · Adoption of FBET process. · Large yfs. · Small Ciss. · Very low noise figure. 0.4 0.5 2.2 0.6 1.8 15.0 0.4 0.4 1 2 1.3 0.7 3 1.3 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSS VGDS IG ID PD Tj Tstg Conditions 3.0 3.