Datasheet4U Logo Datasheet4U.com

30A01C - PNP Transistor

Features

  • Large current capacity. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=0.67Ω[IC=0.3A, IB=15mA]. Ultrasmall package facilitates miniaturization in end products. Small ON-resistance (Ron). 0.5 0.16 0 to 0.1 3 1 0.95 0.95 2 1.9 2.9 0.5 1.5 2.5 0.8 1.1 Conditions 1 : Base 2 : Emitter 3 : Collector SANYO : CP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emi.

📥 Download Datasheet

Datasheet preview – 30A01C

Datasheet Details

Part number 30A01C
Manufacturer SANYO
File Size 59.18 KB
Description PNP Transistor
Datasheet download datasheet 30A01C Datasheet
Additional preview pages of the 30A01C datasheet.

📁 Similar Datasheet

  • 30A02MH - Bipolar Transistor (ON Semiconductor)
  • 30A1000V - SILICON RECTIFIERS (Yangzhou yangjie electronic)
  • 30APF04 - Fast Recovery Rectifier (INCHANGE)
Other Datasheets by Sanyo Semicon Device

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com Ordering number : ENN7509 30A01C PNP Epitaxial Planar Silicon Transistor 30A01C Low-Frequency General-Purpose Amplifier Applications Applications • Package Dimensions unit : mm 2018B [30A01C] 0.4 Low-frequency power amplifier, muting circuit. Features • • • • Large current capacity. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=0.67Ω[IC=0.3A, IB=15mA]. Ultrasmall package facilitates miniaturization in end products. Small ON-resistance (Ron). 0.5 0.16 0 to 0.1 3 1 0.95 0.95 2 1.9 2.9 0.5 1.5 2.5 0.8 1.
Published: |