3SK248
Features
- MOSFET with a back gate terminal.
- Enhancement type.
- Small ON resistance.
- Small-sized package permitting 3SK248-applied sets to be made smaller and slimmer.
Package Dimensions unit:mm
2100A
0.95 0.95 0.4
[3SK248]
0.16 0 to 0.1
1.5 0.5 2.5
12 0.95 0.85
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS
ID PD Tch
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Marking : NJ
Symbol
Conditions
V(BR)DSS VGSS IDSS...
