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3SK248 - N-Channel Enhancement Silicon MOSFET

Key Features

  • MOSFET with a back gate terminal.
  • Enhancement type.
  • Small ON resistance.
  • Small-sized package permitting 3SK248-applied sets to be made smaller and slimmer. Package Dimensions unit:mm 2100A 1.9 0.95 0.95 0.4 43 [3SK248] 0.16 0 to 0.1 1.5 0.5 2.5 12 0.95 0.85 2.9 0.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Allowable Power Dissipation Channel Temperature Storage Temperature.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
3SK263 N-Channel Silicon MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN4540 N-Channel Enhancement Silicon MOSFET 3SK248 Muting/Switching Applications Features · MOSFET with a back gate terminal. · Enhancement type. · Small ON resistance. · Small-sized package permitting 3SK248-applied sets to be made smaller and slimmer. Package Dimensions unit:mm 2100A 1.9 0.95 0.95 0.4 43 [3SK248] 0.16 0 to 0.1 1.5 0.5 2.5 12 0.95 0.85 2.9 0.