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3SK264 - N-Channel Silicon MOSFET

Key Features

  • Enhancement type.
  • Easy AGC (Cut off at VG2S=0V).
  • Small noise figure.
  • Excels in cross modulation characteristics. Package Dimensions unit:mm 2096A [3SK264] 1.9 0.95 0.95 0.4 43 0.16 0 to 0.1 1.5 0.5 2.5 12 0.95 0.85 2.9 0.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate1-to-Source Voltage Gate2-to-Source Voltage Drain Current Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDS VG1S VG2S ID PD.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
3SK263 N-Channel Silicon MOSFET
3SK265 VHF/ CATV Tuner/ High-Frequency Amp Applications
3SK248 N-Channel Enhancement Silicon MOSFET
3SK180 High-Frequency General-Purpose Amp Applications
3SK189 UHF Amp/Mixer Applications

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN4901 N-Channel Silicon MOSFET 3SK264 VHF Tuner, High-Frequency Amplifier Applications Features · Enhancement type. · Easy AGC (Cut off at VG2S=0V). · Small noise figure. · Excels in cross modulation characteristics. Package Dimensions unit:mm 2096A [3SK264] 1.9 0.95 0.95 0.4 43 0.16 0 to 0.1 1.5 0.5 2.5 12 0.95 0.85 2.9 0.