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50C02SP - Low-Frequency General-Purpose Amplifier Applications

Datasheet Summary

Features

  • 0.4 15.0.
  • Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=175mΩ [IC=0.5A, IB=50mA]. Ultrasmall package facilitates miniaturization in end products. Small ON-resistance (Ron). 0.4 0.5 0.6 1.8 0.4 1 2 1.3 0.7 3 1.3 1 : Emitter 2 : Collector 3 : Base SANYO : SPA Ratings 60 50 5 500 1.0 400 150 --55 to +150 Unit V V V mA A mW °C °C Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collecto.

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Datasheet Details

Part number 50C02SP
Manufacturer Sanyo Semicon Device
File Size 32.74 KB
Description Low-Frequency General-Purpose Amplifier Applications
Datasheet download datasheet 50C02SP Datasheet
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Ordering number : ENN7518 50C02SP NPN Epitaxial Planar Silicon Transistor 50C02SP Low-Frequency General-Purpose Amplifier Applications Applications • Package Dimensions unit : mm 2033A [50C02SP] 4.0 3.0 2.2 Low-frequency Amplifer, high-speed switching, small motor drive, muting circuit. Features • • • 0.4 15.0 • Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=175mΩ [IC=0.5A, IB=50mA]. Ultrasmall package facilitates miniaturization in end products. Small ON-resistance (Ron). 0.4 0.5 0.6 1.8 0.4 1 2 1.3 0.7 3 1.3 1 : Emitter 2 : Collector 3 : Base SANYO : SPA Ratings 60 50 5 500 1.
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