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5LN02N - Ultrahigh-Speed Switching Applications

Key Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 2.5V drive. Package Dimensions unit:mm 2178 [5LN02N] 5.0 4.0 4.0 0.45 0.5 0.6 2.0 5.0 0.45 0.44 1 2 3 14.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1.3 1.3 1 : Source 2 : Dra.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number:ENN6538 N-Channel Silicon MOSFET 5LN02N Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. Package Dimensions unit:mm 2178 [5LN02N] 5.0 4.0 4.0 0.45 0.5 0.6 2.0 5.0 0.45 0.44 1 2 3 14.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1.3 1.3 1 : Source 2 : Drain 3 : Gate SANYO : NP Ratings 50 ±10 0.2 0.8 0.