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5LP01C - Ultrahigh-Speed Switching Applications

Key Features

  • Package Dimensions unit : mm 2091A [5LP01C] 0.4 Low ON-resistance. Ultrahigh-Speed Switching. 2.5V drive. 0.5 0.16 0 to 0.1 3 1 0.95 0.95 2 1.9 2.9 0.5 1.5 2.5 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings 0.8 1.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number : ENN6619 5LP01C P-Channel Silicon MOSFET 5LP01C Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2091A [5LP01C] 0.4 Low ON-resistance. Ultrahigh-Speed Switching. 2.5V drive. 0.5 0.16 0 to 0.1 3 1 0.95 0.95 2 1.9 2.9 0.5 1.5 2.5 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings 0.8 1.1 1 : Gate 2 : Source 3 : Drain SANYO : CP Unit -50 ±10 --0.07 --0.28 0.