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5LP01S - Ultrahigh-Speed Switching Applications

Key Features

  • Package Dimensions unit : mm 2124 [5LP01S] 0.3 3 0.8 1.6 Low ON-resistance. Ultrahigh-Speed Switching. 2.5V drive. 0.75 0.6 0 to 0.1 0.2 1 2 0.4 0.4 0.5 0.5 1.6 0.1max 0.1 1 : Gate 2 : Source 3 : Drain SANYO : SMCP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number : ENN6666 5LP01S P-Channel Silicon MOSFET 5LP01S Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2124 [5LP01S] 0.3 3 0.8 1.6 Low ON-resistance. Ultrahigh-Speed Switching. 2.5V drive. 0.75 0.6 0 to 0.1 0.2 1 2 0.4 0.4 0.5 0.5 1.6 0.1max 0.1 1 : Gate 2 : Source 3 : Drain SANYO : SMCP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings -50 ±10 --0.07 --0.28 0.