Datasheet4U Logo Datasheet4U.com

5LP01S - Ultrahigh-Speed Switching Applications

Datasheet Summary

Features

  • Package Dimensions unit : mm 2124 [5LP01S] 0.3 3 0.8 1.6 Low ON-resistance. Ultrahigh-Speed Switching. 2.5V drive. 0.75 0.6 0 to 0.1 0.2 1 2 0.4 0.4 0.5 0.5 1.6 0.1max 0.1 1 : Gate 2 : Source 3 : Drain SANYO : SMCP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD.

📥 Download Datasheet

Datasheet preview – 5LP01S

Datasheet Details

Part number 5LP01S
Manufacturer Sanyo Semicon Device
File Size 162.43 KB
Description Ultrahigh-Speed Switching Applications
Datasheet download datasheet 5LP01S Datasheet
Additional preview pages of the 5LP01S datasheet.

📁 Similar Datasheet

  • 5LP01S - P-Channel Small Signal MOSFET (ON Semiconductor)
  • 5LP01SS - P-Channel Small Signal MOSFET (ON Semiconductor)
  • 5LP01C - P-Channel Small Signal MOSFET (ON Semiconductor)
  • 5LP01M - P-Channel Small Signal MOSFET (ON Semiconductor)
Other Datasheets by Sanyo Semicon Device
  • 5LP01SP - Ultrahigh-Speed Switching Applications
  • 5LP01SS - P-Channel Silicon MOSFET
  • 5LP01C - Ultrahigh-Speed Switching Applications
  • 5LP01M - ULTRAHIGH-SPEED SWITCHING APPLICATIONS
  • 5LP01N - P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
  • 5LP02C - Ultrahigh-Speed Switching Applications
  • 5LP02M - Ultrahigh-Speed Switching Applications
  • 5LP02SP - Ultrahigh-Speed Switching Applications

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com Ordering number : ENN6666 5LP01S P-Channel Silicon MOSFET 5LP01S Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2124 [5LP01S] 0.3 3 0.8 1.6 Low ON-resistance. Ultrahigh-Speed Switching. 2.5V drive. 0.75 0.6 0 to 0.1 0.2 1 2 0.4 0.4 0.5 0.5 1.6 0.1max 0.1 1 : Gate 2 : Source 3 : Drain SANYO : SMCP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings -50 ±10 --0.07 --0.28 0.
Published: |