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B829 - 2SB829

Key Features

  • Low-saturation collector-to-emitter voltage : VCE(sat) =.
  • 0.5V max.
  • Wide ASO leading to high resistance to breakdown. Package Dimensions unit:mm 2022A [2SD829/2SD1065] ( ) : 2SB829 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Elec.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
B824 2SB824
B825 2SB825

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:825C PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB829/2SD1065 50V/15A Switching Applications Applications · Relay drivers, high-speed inverters, converters, and other general high-current switching applications. Features · Low-saturation collector-to-emitter voltage : VCE(sat) =–0.5V max. · Wide ASO leading to high resistance to breakdown.