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C2910 - 2SC2910

Key Features

  • Adoption of FBET process.
  • High breakdown voltage.
  • Excellent linearity of hFE and small Cob.
  • Fast swtching speed. Package Dimensions unit:mm 2006B [2SA1208/2SC2910] 6.0 5.0 4.7 6.0 3.0 14.0 8.5 0.5 0.6 0.5 0.5 ( ) : 2SA1208 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN781G PNP/NPN Epitaxial Planar Silicon Transistors 2SA1208/2SC2910 High-Voltage Switching Audio 80W Output Predriver Applications Features · Adoption of FBET process. · High breakdown voltage. · Excellent linearity of hFE and small Cob. · Fast swtching speed. Package Dimensions unit:mm 2006B [2SA1208/2SC2910] 6.0 5.0 4.7 6.0 3.0 14.0 8.5 0.5 0.6 0.5 0.