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C3068 - 2SC3068

Key Features

  • High DC current gain (h FE=800 to 3200).
  • Large current capacity.
  • Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max).
  • High VEBO (VEBO≥15V). JEDEC : TO-92 EIAJ : SC-43 Specifications Absolute Maximum Ratings at Ta = 25˚C Pl arameter CV ollector-to-Base Voltage CV ollector-to-Emitter Voltage EV mitter-to-Base Voltage CI ollector Current CI ollector Current (Pulse) BI ase Current CP ollector Dissipation Jj unction Temperature Sg torage Temperature Ss ymbo CBO C.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
C3067 2SC3067
C3069 2SC3069
C3071 2SC3071
C3094 2SC3094

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN943G NPN Epitaxial Planar Silicon Transistor 2SC3068 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · Low-frequency, general-purpose amplifier., various drivers, muting circuit. Package Dimensions unit:mm 2003A [2SC3068] Features · High DC current gain (h FE=800 to 3200). · Large current capacity. · Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max). · High VEBO (VEBO≥15V).