C3503 - 2SC3503

Product Overview

Sanyo Semicon Device

Part number	C3503
Manufacturer	Sanyo Semicon Device
File Size	156.42 KB
Description	2SC3503
Datasheet	C3503 Datasheet
Additional preview pages of the C3503 datasheet.

Package Dimensions unit:mm 2009A [2SA1381/2SC3503].
High breakdown voltage : VCEO≥300V.
Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V.
Adoption of MBIT process. JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature S.

📁 Similar Datasheet

Other Datasheets by Sanyo Semicon Device

Published: Aug 21, 2014 |