Datasheet4U Logo Datasheet4U.com

C3636 - 2SC3636

Key Features

  • High reliability (Adoption of HVP process).
  • Fast speed.
  • High breakdown voltage.
  • Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3636] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
C3631 2SC3631 NEC
C3632-Z 2SC3632-Z NEC
C3637 2SC3637 Sanyo
C3638 2SC3638 Sanyo
C3600 2SC3600 Sanyo

Other Datasheets by SANYO (now Panasonic)

Part Number Description
C3642 2SC3642
C3654 2SC3654
C3675 2SC3675
C3685 2SC3685
C3686 2SC3686

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number:EN1614C NPN Triple Diffused Planar Silicon Transistor 2SC3636 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High reliability (Adoption of HVP process). · Fast speed. · High breakdown voltage. · Adoption of MBIT process.