Adoption of MBIT process. Specifications
Absolute Maximum Ratings at Ta = 25˚C
Pl arameter CV ollector-to-Base Voltage CV ollector-to-Emitter Voltage EV mitter-to-Base Voltage CI ollector Current CI ollector Current (Pulse) CP ollector Dissipation Jj unction Temperature Sg torage Temperature Ss ymbo CBO CEO EBO C CP C T Tst
Tc=25˚C
1 : Base 2 : Collector 3 : Emit.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Ordering number:EN1940B
NPN Triple Diffused Planar Silicon Transistor
2SC3688
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Applications
· Ultrahigh-definition color display horizontal deflection output.
Package Dimensions
unit:mm 2022A
[2SC3688]
Features
· Fast speed (t f=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process). · Adoption of MBIT process.