C3788
Overview
- High breakdown voltage : VCEO≥200V.
- Small reverse transfer capacitance and excellent high frequency cahaceteristic : Cre=1.2pF (NPN), 1.7pF (PNP).
- Adoption of FBET process.
- Part: C3788
- Description: PNP/NPN Epitaxial Planar Silicon Transistors
- Category: Transistor
- Manufacturer: SANYO
- Size: 153.38 KB