C3998 - 2SC3998

SANYO (now Panasonic)

Key Features

High speed (tf=100ns typ).
High breakdown voltage (VCBO=1500V).
High reliability (adoption of HVP process).
Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta=25.

C3998 2sc3998 by SANYO (now Panasonic) - Datasheet Preview

Datasheet Details

Part number	C3998
Manufacturer	SANYO (now Panasonic)
File Size	32.37 KB
Description	2SC3998
Datasheet	C3998 Datasheet

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Other Datasheets by SANYO (now Panasonic)

Part Number	Description
C3990	2SC3990
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN2732A 2SC3998 SANYO Semiconductors DATA SHEET 2SC3998 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed (tf=100ns typ). • High breakdown voltage (VCBO=1500V). • High reliability (adoption of HVP process). • Adoption of MBIT process.