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C4487 - 2SC4487

Key Features

  • Adoption of FBET, MBIT processes.
  • Large current capacity, wide ASO.
  • Low collector-to-emitter saturation voltage.
  • Fast switching speed. Package Dimensions unit:mm 2064 [2SA1707/2SC4487] ( ) : 2SA1707 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN3093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1707/2SC4487 High-Current Switching Applications Features · Adoption of FBET, MBIT processes. · Large current capacity, wide ASO. · Low collector-to-emitter saturation voltage. · Fast switching speed.