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C5388 - 2SC5388

Key Features

  • High speed (Adoption of MBIT process).
  • High breakdown voltage (VCBO=1500V).
  • High reliability (Adoption of HVP process).
  • On-chip damper diode. Package Dimensions unit:mm 2039D [2SC5388] 3.4 16.0 5.6 3.1 5.0 8.0 21.0 22.0 20.4 2.8 2.0 1.0 4.0 2.0 0.6 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Di.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com Ordering number:ENN6283 NPN Triple Diffused Planar Silicon Transistor 2SC5388 High-Voltage Switching Applications Features · High speed (Adoption of MBIT process). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · On-chip damper diode. Package Dimensions unit:mm 2039D [2SC5388] 3.4 16.0 5.6 3.1 5.0 8.0 21.0 22.0 20.4 2.8 2.0 1.0 4.0 2.0 0.6 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25˚C 5.45 Conditions 3.5 5.45 2.