Datasheet4U Logo Datasheet4U.com

C5690 - 2SC5690

Features

  • High speed.
  • High breakdown voltage(VCBO=1500V).
  • High reliability(Adoption of HVP process).
  • Adoption of MBIT process.
  • On-chip damper diode. Package Dimensions unit : mm 2174A [2SC5690] 16.0 3.4 5.6 3.1 22.0 8.0 0.8 21.0 5.0 4.0 2.8 2.0 2.1 0.7 0.9 20.4 Specifications Absolute Maximum Ratings at Ta=25°C 12 3 5.45 5.45 3.5 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH Parameter Collector-to-Base Voltage Collector-to-Emitter Voltag.

📥 Download Datasheet

Datasheet preview – C5690

Datasheet Details

Part number C5690
Manufacturer Sanyo Semicon Device
File Size 28.52 KB
Description 2SC5690
Datasheet download datasheet C5690 Datasheet
Additional preview pages of the C5690 datasheet.

📁 Similar Datasheet

  • C5695 - 2SC5695 (Toshiba Semiconductor)
  • C5696 - 2SC5696 (Sanyo)
  • C5698 - 2SC5698 (Sanyo Semiconductor Corporation)
  • C5604 - 2SC5604 (NEC)
  • C5609 - 2SC5609 (Panasonic Semiconductor)
  • C5612 - 2SC5612 (Toshiba Semiconductor)
  • C5615 - NPN SILICON RF TRANSISTOR (NEC)
  • C5617 - NPN SILICON RF TRANSISTOR (NEC)
  • C5622 - 2SC5622 (Panasonic Semiconductor)
  • C5625 - SMALL-SIGNAL TRANSISTOR (ISAHAYA ELECTRONICS)
Other Datasheets by Sanyo Semicon Device

Full PDF Text Transcription

Click to expand full text
Ordering number : ENN6896A 2SC5690 NPN Triple Diffused Planar Silicon Transistor 2SC5690 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode. Package Dimensions unit : mm 2174A [2SC5690] 16.0 3.4 5.6 3.1 22.0 8.0 0.8 21.0 5.0 4.0 2.8 2.0 2.1 0.7 0.9 20.4 Specifications Absolute Maximum Ratings at Ta=25°C 12 3 5.45 5.45 3.
Published: |