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C6017 - 2SC6017

Datasheet Summary

Features

  • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications ( ) : 2SA2169 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg PW≤100µs Conditions R.

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Datasheet Details

Part number C6017
Manufacturer Sanyo Semicon Device
File Size 244.11 KB
Description 2SC6017
Datasheet download datasheet C6017 Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com Ordering number : ENN8275 2SA2169 / 2SC6017 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2169 / 2SC6017 Applications • High-Current Switching Applications Relay drivers, lamp drivers, motor drivers. Features • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications ( ) : 2SA2169 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg PW≤100µs Conditions Ratings (-50)100 (--)50 Unit V V V A A A W W °C °C DataSheet4U.
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