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C6099 - 2SC6099

Key Features

  • Adoption of FBET, MBIT process.
  • High current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching.
  • High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number : ENA0435 2SC6099 SANYO Semiconductors DATA SHEET 2SC6099 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features • Adoption of FBET, MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation.