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CPH3101 - PNP Transistor

Key Features

  • Adoption of FBET and MBIT processes.
  • High current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching.
  • Ultrasmall-sized package permitting applied sets to be made small and slim.
  • High allowable power dissipation. 3 0.15 0 to 0.1 1.6 2.8 1 1.9 2 0.6 ( ) : CPH3101 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collect.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN6006 PNP/NPN Silicon Epitaxial Planar Transistors CPH3101/3201 DC/DC Converter Applications Applications · Relay drivers, lamp drivers, motor drivers, strobes. Package Dimensions unit:mm 2150 [CPH3101/3201] 2.9 0.4 0.6 0.2 Features · Adoption of FBET and MBIT processes. · High current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to be made small and slim. · High allowable power dissipation. 3 0.15 0 to 0.1 1.6 2.8 1 1.9 2 0.