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CPH3105 - PNP Transistor

Key Features

  • Adoption of FBET, MBIT processes.
  • High current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching.
  • Ultrasmall-package of 0.9mm mounting heigh facilitates miniaturization in end products.
  • High allowable power dissipation. 0.05 1.6 2.8 1 1.9 2 0.2 0.6 1 : Base 2 : Emitter 3 : Collector SANYO : CPH3 Specifications ( ) : CPH3105 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN6084B PNP/NPN Silicon Epitaxial Planar Transistors CPH3105/3205 High-Current Switching Applications Applications · DC-DC converters relay drivers, lamp drivers, motor drivers, strobes. Package Dimensions unit:mm 2150A [CPH3105/3205] 2.9 0.4 3 0.6 Features · Adoption of FBET, MBIT processes. · High current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall-package of 0.9mm mounting heigh facilitates miniaturization in end products. · High allowable power dissipation. 0.05 1.6 2.8 1 1.9 2 0.2 0.