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CPH3115 - PNP Transistor

Key Features

  • Adoption of MBIT processes.
  • Large current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching.
  • Ultrasmall-sized package permitting applied sets to be made small and slim (mounting height : 0.9mm).
  • High allowable power dissipation. 0.05 1.6 2.8 1 1.9 2 0.2 0.6 Specifications ( ) : CPH3115 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Curre.

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Other Datasheets by SANYO (now Panasonic)

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CPH3110 PNP/NPN Silicon Epitaxial Planar Transistors
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN6344 PNP/NPN Epitaxial Planar Silicon Transistors CPH3115/CPH3215 DC/DC Converter Applications Applications · Relay drivers, lamp drivers, motor drivers, and strobes. Package Dimensions unit:mm 2150A [CPH3115/CPH3215] 2.9 0.4 3 0.6 Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to be made small and slim (mounting height : 0.9mm). · High allowable power dissipation. 0.05 1.6 2.8 1 1.9 2 0.2 0.