Adoption of FBET, MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). High allowable power dissipation. Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current.
Full PDF Text Transcription for CPH3147 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
CPH3147. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com Ordering number : ENA0539 CPH3147 SANYO Semiconductors DATA SHEET CPH3147 Applications • PNP Epitaxial Planar Silicon Transistor High-Current Switchin...
View more extracted text
ations • PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications DC / DC converter, Relay drivers, lamp drivers, motor drivers. Features • • • • • • Adoption of FBET, MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). High allowable power dissipation.