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CPH3304 - Ultrahigh-Speed Switching Applications

Key Features

  • Low ON resistance.
  • Ultrahigh-speed switching.
  • 4V drive. Package Dimensions unit:mm 2152 [CPH3304] 2.9 0.4 0.6 0.2 0.15 3 0 to 0.1 1.6 2.8 1 1.9 2 0.2 0.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2×0.8mm).

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
CPH3303 Ultrahigh-Speed Switching Applications
CPH3305 Ultrahigh-Speed Switching Applications
CPH3306 Ultrahigh-Speed Switching Applications
CPH3307 Ultrahigh-Speed Switching Applications
CPH3308 Ultrahigh-Speed Switching Applications

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN5987 P-Channel MOS Silicon FET CPH3304 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2152 [CPH3304] 2.9 0.4 0.6 0.2 0.15 3 0 to 0.1 1.6 2.8 1 1.9 2 0.2 0.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2×0.8mm) Conditions 0.7 0.9 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Ratings –30 ±20 –1.6 –6.4 1.