CPH3326 - P-Channel Silicon MOSFET General-Purpose Switching Device

Datasheet Summary

Features

General-Purpose Switching Device.

Sanyo Semicon Device

📥 Download Datasheet

Datasheet Details

Part number	CPH3326
Manufacturer	Sanyo Semicon Device
File Size	60.06 KB
Description	P-Channel Silicon MOSFET General-Purpose Switching Device
Datasheet	CPH3326 Datasheet
Additional preview pages of the CPH3326 datasheet.

📁 Similar Datasheet

CPH3340 - P-Channel Silicon MOSFET (Sanyo)
CPH3348 - Power MOSFET (ON Semiconductor)
CPH3350 - P-Channel Power MOSFET (ON Semiconductor)
CPH3351 - Power MOSFET (ON Semiconductor)
CPH3355 - Power MOSFET (ON Semiconductor)
CPH3356 - Power MOSFET (ON Semiconductor)
CPH3360 - Power MOSFET (ON Semiconductor)
CPH3362 - Power MOSFET (ON Semiconductor)
CPH3101 - Bipolar Transistor (ON Semiconductor)
CPH3105 - Bipolar Transistor (ON Semiconductor)

Other Datasheets by Sanyo Semicon Device

CPH3322 - Ultrahigh-Speed Switching Applications
CPH3323 - Ultrahigh-Speed Switching Applications
CPH3324 - General-Purpose Switching Device Applications
CPH3325 - P-Channel Silicon MOSFET General-Purpose Switching Device
CPH3327 - P-Channel Silicon MOSFET General-Purpose Switching Device Applications
CPH3303 - Ultrahigh-Speed Switching Applications
CPH3304 - Ultrahigh-Speed Switching Applications
CPH3305 - Ultrahigh-Speed Switching Applications

Full PDF Text Transcription

Click to expand full text

Ordering number : ENN7913 CPH3326 www.DataSheet4U.com P-Channel Silicon MOSFET CPH3326 Features • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings --100 ±20 --0.

Published: Mar 20, 2010 |