Datasheet4U Logo Datasheet4U.com

CPH3407 - Ultrahigh-Speed Switching Applications

Key Features

  • Package Dimensions unit : mm 2152A [CPH3407] 0.2 0.05 2.9 0.4 0.15 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.6 3 1 1.9 2 0.6 1.6 2.8 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, dut.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CPH3427 N-Channel Silicon MOSFET Sanyo
CPH3427-TL-E N-Channel MOSFET VBsemi
CPH3430 N-Channel Silicon MOSFET Sanyo
CPH3442 N-Channel Silicon MOSFET Sanyo
CPH3448 Power MOSFET ON Semiconductor

Other Datasheets by SANYO (now Panasonic)

Part Number Description
CPH3403 Ultrahigh-Speed Switching Applications
CPH3405 Ultrahigh-Speed Switching Applications
CPH3406 Ultrahigh-Speed Switching Applications
CPH3408 Ultrahigh-Speed Switching Applications
CPH3409 Ultrahigh-Speed Switching Applications

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number : ENN6997 CPH3407 N-Channel Silicon MOSFET CPH3407 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2152A [CPH3407] 0.2 0.05 2.9 0.4 0.15 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.6 3 1 1.9 2 0.6 1.6 2.8 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 20 ± 10 5 20 1.