Datasheet4U Logo Datasheet4U.com

CPH3413 - Ultrahigh-Speed Switching Applications

Datasheet Summary

Features

  • Package Dimensions unit : mm 2152A [CPH3413] Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.4 0.6 3 0.05 1 1.9 2 0.6 1.6 2.8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Co.

📥 Download Datasheet

Datasheet preview – CPH3413

Datasheet Details

Part number CPH3413
Manufacturer Sanyo Semicon Device
File Size 27.76 KB
Description Ultrahigh-Speed Switching Applications
Datasheet download datasheet CPH3413 Datasheet
Additional preview pages of the CPH3413 datasheet.

📁 Similar Datasheet

  • CPH3427 - N-Channel Silicon MOSFET (Sanyo)
  • CPH3427-TL-E - N-Channel MOSFET (VBsemi)
  • CPH3430 - N-Channel Silicon MOSFET (Sanyo)
  • CPH3442 - N-Channel Silicon MOSFET (Sanyo)
  • CPH3448 - Power MOSFET (ON Semiconductor)
  • CPH3455 - Power MOSFET (ON Semiconductor)
  • CPH3456 - Power MOSFET (ON Semiconductor)
  • CPH3457 - N-Channel Power MOSFET (ON Semiconductor)
  • CPH3459 - Power MOSFET (ON Semiconductor)
  • CPH3461 - Power MOSFET (ON Semiconductor)
Other Datasheets by Sanyo Semicon Device
  • CPH3410 - Ultrahigh-Speed Switching Applications
  • CPH3414 - Ultrahigh-Speed Switching Applications
  • CPH3417 - N-Channel Silicon MOSFET
  • CPH3418 - Ultrahigh-Speed Switching Applications
  • CPH3403 - Ultrahigh-Speed Switching Applications
  • CPH3405 - Ultrahigh-Speed Switching Applications
  • CPH3406 - Ultrahigh-Speed Switching Applications
  • CPH3407 - Ultrahigh-Speed Switching Applications

Full PDF Text Transcription

Click to expand full text
Ordering number : ENN6924 CPH3413 N-Channel Silicon MOSFET CPH3413 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2152A [CPH3413] Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.4 0.6 3 0.05 1 1.9 2 0.6 1.6 2.8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions 0.7 0.9 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 0.2 Ratings 20 ±10 2.2 8.8 1.0 150 --55 to +150 0.2 2.9 0.
Published: |