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Ordering number:EN5983
N-Channel MOS Silicon FET
CPH6402
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · 4V drive.
Package Dimensions
unit:mm 2151
[CPH6402]
6 5 4
0.6
0 to 0.1
0.6
1.6
2.8
1
2
3 0.95
1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions
0.4
0.7 0.9
0.2
Ratings 30 ±24 4 16 1.6 150 –55 to +150
0.2
2.9
0.15
Unit V V A A W ˚C ˚C
Mounted on a ceramic board (900mm2×0.
CPH6402 Datasheet
