CPH6519 Datasheet PDF - Sanyo Semicon Device NPN Epitaxial Planar Silicon Composite Transistors Low-Frequency General-Purpose Amplifier Specs

CPH6519 - NPN Epitaxial Planar Silicon Composite Transistors Low-Frequency General-Purpose Amplifier

Datasheet Summary

Features

Package Dimensions unit : mm 2212 [CPH6519] 6 5 4 0.6 0.2.
1 2 0.2 3 0.95 0.6 Composite type with 2 transistors contained in the CPH package currently in use, improving the mounting efficiency greatly. The CPH6519 is formed with two chips, being equivalent to the 2SC3689, placed in one package. Adoption of FBET process. High DC current gain (hFE=800 to 3200). High VEBO (VEBO≥15V). Excellent in thermal equilibrium and pair capabi.

Datasheet Details

Part number	CPH6519
Manufacturer	Sanyo Semicon Device
File Size	159.82 KB
Description	NPN Epitaxial Planar Silicon Composite Transistors Low-Frequency General-Purpose Amplifier
Datasheet	CPH6519 Datasheet
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www.DataSheet4U.com Ordering number : ENN7399 CPH6519 NPN Epitaxial Planar Silicon Composite Transistors CPH6519 Low-Frequency General-Purpose Amplifier, Driver Applications Features • Package Dimensions unit : mm 2212 [CPH6519] 6 5 4 0.6 0.2 • • • • • 1 2 0.2 3 0.95 0.6 Composite type with 2 transistors contained in the CPH package currently in use, improving the mounting efficiency greatly. The CPH6519 is formed with two chips, being equivalent to the 2SC3689, placed in one package. Adoption of FBET process. High DC current gain (hFE=800 to 3200). High VEBO (VEBO≥15V). Excellent in thermal equilibrium and pair capability. 2.9 0.15 0.05 1.6 2.8 0.

Published: Oct 23, 2006 |