D1876
Features
- High speed (tf=100ns).
- High breakdown voltage (VCBO=1500V).
- High reliability (adoption of HVP process).
- On-chip damper diode.
5.6 3.1
2.8 2.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML
Ratings 1500 800 6 3 12 50 150
- 55 to +150
Unit V V V A A W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Collector-to-Emitter Sustain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage DC Current Gain Diode Forward Voltage Fall Time Symbol ICES ICBO VCE=1500V 800 40 130 5 1.5 8 3 0.1 6 2.0 0.3 V µs Conditions Ratings min...
